std200gkxx thyristor-diode modules type std200gk08 STD200GK12 std200gk14 std200gk16 std200gk18 v rrm v drm v 800 1200 1400 1600 1800 v rsm v dsm v 900 1300 1500 1700 1900 dimensions in mm (1mm=0.0394") symbol test conditions maximum ratings unit t vj =t vjm t c =85 o c; 180 o sine 314 200 a t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 8000 8500 7000 7600 a i tsm , i fsm t vj =45 o c t=10ms (50hz), sine v r =0 t=8.3ms (60hz), sine t vj =t vjm t=10ms(50hz), sine v r =0 t=8.3ms(60hz), sine 38000 34000 30000 27000 a 2 s i 2 dt (di/dt) cr 250 800 a/us (dv/dt) cr t vj =t vjm ; v dr =2/3v drm r gk = ; method 1 (linear voltage rise) 1000 v/us p gm t vj =t vjm t p =30us i t =i tavm t p =500us 120 60 w p gav 20 w i trms , i frms i tavm , i favm o c t vj t vjm t stg -40...+130 125 -40...+130 v isol 50/60hz, rms t=1min i isol <1ma t=1s 3000 3600 v~ m d mounting torque (m5) terminal connection torque (m8) _ 2.5-5/22-44 12-15/106-132 nm/lb.in. weight 245 g t vj =t vjm repetitive, i t =750a f=50hz, t p =200us v d =2/3v drm i g =1a non repetitive, i t =200a di g /dt=1a/us v rgm 10 v typical p1 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
thyristor-diode modules symbol test conditions characteristic values unit i rrm t vj =t vjm ; v r =v rrm ; v d =v drm 70 ma features * international standard package * dcb base plate * glass passivated chips * isolation voltage 3600 v~ advantages * space and weight savings * simple mounting * improved temperature and power cycling * reduced protection circuits applications * motor control * power converter * heat and temperature control for industrial furnaces and chemical processes * lighting control * contactless switches ma i drm 40 v v t , v f i t , i f =600a; t vj =25 o c 1.50 v to for power-loss calculations only (t vj =140 o c) 0.95 v r t 1.0 m v d =6v; t vj =25 o c t vj =-40 o c v gt 2 3 v v d =6v; t vj =25 o c t vj =-40 o c i gt 150 200 ma v gd t vj =t vjm ; v d =2/3v drm 0.25 v i gd 10 ma i h t vj =25 o c; v d =6v; r gk = 150 ma t vj =25 o c; t p =30us; v d =6v i g =0.45a; di g /dt=0.45a/us 300 ma i l per thyristor/diode; dc current per module r thjc 0.140 0.070 k/w per thyristor/diode; dc current per module r thjk 0.180 0.090 k/w d s creeping distance on surface 12.7 mm d a strike distance through air 9.6 mm a maximum allowable acceleration 50 m/s 2 t vj =25 o c; v d =1/2v drm i g =1a; di g /dt=1a/us t gd 2 us t vj =t vjm ; i t =300a; t p =200us; -di/dt=10a/us typ. v r =100v; dv/dt=50v/us; v d =2/3v drm t q 200 us uc q s t vj =125 o c; i t , i f =400a; -di/dt=50a/us 760 i rm 275 a std200gkxx * ul file no.e310749 * rohs complian t p2 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
thyristor-diode modules fig. 2a maximum forward current at case temperature fig. 3 power dissipation versus on- state current and ambient temperature (per thyristor or diode) fig. 5 three phase rectifier bridge: power dissipation versus direct output current and ambient temperature fig. 1 surge overload current i tsm , i fsm : crest value, t: duration fig. 4 gate trigger characteristics fig. 6 gate trigger delay time fig. 2 i 2 t versus time (1-10 ms) 3 x std/sdt200 std200gkxx p3 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
thyristor-diode modules fig. 7 three phase ac-controller: power dissipation versus rms output current and ambient temperature 10 -3 10 -2 10 -1 10 0 10 1 10 2 0. 0 0 0. 0 5 0. 1 0 0. 1 5 0. 2 0 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.0 0 0.0 5 0.1 0 0.1 5 t s z th j k k/w t s z th jc k/w 30 dc 30 dc fig. 8 transient thermal impedance junction to case (per thyristor or diode) fig. 9 transient thermal impedance junction to heatsink (per thyristor or diode) r thjc for various conduction angles d: dr thjc (k/w) d c 0.129 180 o c 0.131 120 o c 0.131 60 o c 0.132 30 o c 0.132 constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.0035 0.099 2 0.0165 0.168 3 0.1091 0.456 r thjk for various conduction angles d: dr thjk (k/w) d c 0.169 180 o c 0.171 120 o c 0.172 60 o c 0.172 30 o c 0.173 constants for z thjk calculation: ir thi (k/w) t i (s) 1 0.0033 0.099 2 0.0159 0.168 3 0.1053 0.456 4 0.04 1.36 3 x std/sdt200 std200gkxx p4 ?2008 sirectifier all rights reserved, tel: +86-519-86800000 fax: +86-519-88019019 e-mail: sales@sirectifier.com www.sirectifier.com
|
